ROHM Semiconductor YQ10RSM10SDTL1 Schottky Diodes Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp

Name: ROHM Semiconductor YQ10RSM10SDTL1 Schottky Diodes Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
Brand: ROHM Semiconductor

ManufacturerROHM Semiconductor(View more products from this manufacturer)

ModelYQ10RSM10SDTL1

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Technology: Si

Configuration: Dual Anode Common Cathode

Mounting Style: SMD/SMT

If - Forward Current: 10 A

Ir - Reverse Current: 80 uA

Vf - Forward Voltage: 610 mV

Vr - Reverse Voltage: 100 V

Ifsm - Forward Surge Current: 200 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 100 V

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