ROHM Semiconductor UMD6NFHATR BJTs - Bipolar Transistors PNP+NPN Digital transistor (with built-in resistors). Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillatto

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 600 at 1 mA, 5 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 100 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV