ROHM Semiconductor SST6839T116 BJTs - Bipolar Transistors TRANS GP BJT PNP 40V 0.2A 3PIN

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 1000 at - 1 mA, - 5 V

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 100 at - 100 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 700 mV