ROHM Semiconductor SST6427T116 BJTs - Bipolar Transistors SURFACE NPN
ModelSST6427T116
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Technology: Si
Unit Weight: 8 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
DC Current Gain hFE Max: 10000 at 10 mA, 5 V
Emitter- Base Voltage VEBO: 12 V
Collector- Base Voltage VCBO: 40 V
Collector- Emitter Voltage VCEO Max: 40 V
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