ROHM Semiconductor SST3906HZGT116 BJTs - Bipolar Transistors PNP SOT-23 -0.2A -40V VCEO

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300 at - 10 mA, - 1 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30 at - 100 mA, - 1 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV