ROHM Semiconductor SST2907AHZGT116 BJTs - Bipolar Transistors PNP SOT-23 -0.6A -60V VCEO

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300 at - 150 mA, - 10 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 600 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 50 at - 500 mA, - 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V