ROHM Semiconductor SH8M4TB1 MOSFET
ModelSH8M4TB1
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FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Power-Maximum: 2W
Operating temperature: 150C
Drain to Source voltage: 30V
Continuous drain current: 9A/7A
Current - Drain (Id) (25°C): 9|7A
Field-effect transistor type: N and P-Channel
Gate Charge - (when applying Vgs): 15nC@5V
On Voltage - (Vgs when Id is applied): 2.5V@1mA
On Resistance - (Rds when Id,Vgs is applied): 18mOhm@9A|10V
Input Capacitance - (Ciss when Vds is applied): 1190pF@10V
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