ROHM Semiconductor SCT3017ALGC11 MOSFET's TO247 650V 118A N-CH SIC

Fall Time: 31 ns

Rise Time: 44 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 172 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 427 W

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 64 ns

Id - Continuous Drain Current: 118 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 22.1 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5.6 V