ROHM Semiconductor SCS215AEGC11 Schottky Silicon Carbide Diodes DIODE 650 THD, SILICON
ModelSCS215AEGC11
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Technology: SiC
Configuration: Single
Mounting Style: Through Hole
If - Forward Current: 15 A
Ir - Reverse Current: 300 uA
Vf - Forward Voltage: 1.55 V
Vr - Reverse Voltage: 650 V
Pd - Power Dissipation: 110 W
Ifsm - Forward Surge Current: 52 A
Maximum Operating Temperature: + 175 C
Vrrm - Repetitive Reverse Voltage: 650 V
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