ROHM Semiconductor RS1G201ATTB1 MOSFETs HSOP8 40V 78A P CHAN

Fall Time: 250 ns

Rise Time: 98 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P Channel

Qg - Gate Charge: 130 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 330 ns

Id - Continuous Drain Current: 78 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 5.2 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V