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ROHM Semiconductor RGPR20NL43HRTL IGBT Transistors 430V 20A, LPDL, Ignition IGBT for Automotive

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Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 107 W

Gate-Emitter Leakage Current: 1.2 mA

Maximum Gate Emitter Voltage: 10 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 460 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 20 A

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