ROHM Semiconductor R6076KNZ4C13 MOSFETs Nch 600V 76A Power MOSFET. R6076KNZ4 is a power MOSFET for switching applications.

Fall Time: 150 ns

Rise Time: 250 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 165 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 735 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 75 ns

Typical Turn-Off Delay Time: 230 ns

Id - Continuous Drain Current: 76 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 42 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 5 V