ROHM Semiconductor R6061YNXC7G MOSFETs Nch 600V 26A, TO-220FM, Power MOSFET: R6061YNX is a power MOSFET with Low on - resistance, suitable for switching.

Fall Time: 23 ns

Rise Time: 41 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 76 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 48 ns

Typical Turn-Off Delay Time: 107 ns

Id - Continuous Drain Current: 26 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 6 V