ROHM Semiconductor R6027YNXC7G MOSFETs Nch 600V 14A, TO-220FM, Power MOSFET: R6027YNX is a power MOSFET with low on - resistance, suitable for switching.

Fall Time: 18 ns

Rise Time: 22 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 40 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 70 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 66 ns

Id - Continuous Drain Current: 81 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 135 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 6 V