ROHM Semiconductor R6011END3TL1 MOSFETs Nch 600V 11A Power MOSFET. Power MOSFET R6011END3 is suitable for switching power supply.

Fall Time: 35 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 32 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 124 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 11 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 390 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4 V