ROHM Semiconductor QSZ2TR BJTs - Bipolar Transistors TRANS GP BJT NPN PNP 30V 1.5A 5PIN

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 680 at 100 mA, 2 V

Gain Bandwidth Product fT: 300 MHz, 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV, 370 mV