ROHM Semiconductor MMST4401T146 BJTs - Bipolar Transistors NPN 40V 0.6A

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 41.898 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300 at 150 mA, 2 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 750 mV