ROHM Semiconductor IMZ4T108 BJTs - Bipolar Transistors NPN/PNP 32V 500MA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 560 at 100 mA, 3 V

Gain Bandwidth Product fT: 250 MHz, 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 100 mA, 3 V

Collector- Emitter Voltage VCEO Max: 32 V

Collector-Emitter Saturation Voltage: 600 mV