ROHM Semiconductor IMX9T110 BJTs - Bipolar Transistors DUAL NPN 20V 500MA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 52.822 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 2700 at 10 mA, 3 V

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 560 at 10 mA, 3 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 400 mV