ROHM Semiconductor IMX4T108 BJTs - Bipolar Transistors DUAL NPN 20V 50MA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 35 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 180 at 10 mA, 10 V

Gain Bandwidth Product fT: 1.5 GHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 56 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV