ROHM Semiconductor IMX25T110 BJTs - Bipolar Transistors TRANS GP BJT NPN 20V 0.3A 6PIN

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 66.312 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 2700 at 4 mA, 2 V

Gain Bandwidth Product fT: 35 MHz

Emitter- Base Voltage VEBO: 25 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 820 at 4 mA, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 100 mV