ROHM Semiconductor DTD743XMT2L Pre-Biased Bipolar Transistor
ModelDTD743XMT2L
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Mounting Type: Surface Mount
Power-Maximum: 150mW
Transistor type: NPN-Prebias
Frequency-Transition: 260MHz
Resistance-Base (R1): 4.7kOhms
Vce Saturation (maximum): 300mV@2.5mA,50mA
Resistance-Emitter base (R2): 10kOhms
DC current gain (hFE) (minimum): 140@100mA,2V
Current-Collector (Ic) (maximum): 200mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 30V
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