ROHM Semiconductor DTC113ZEBTL NPN, SOT-416FL, R1≠R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
ModelDTC113ZEBTL
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Mounting Type: Surface Mount
Power-Maximum: 150mW
Transistor type: NPN-Prebias
Frequency-Transition: 250MHz
Resistance-Base (R1): 1kOhms
Vce Saturation (maximum): 300mV@500uA,10mA
Resistance-Emitter base (R2): 10kOhms
DC current gain (hFE) (minimum): 33@5mA,5V
Current-Collector (Ic) (maximum): 100mA
Current-Collector cutoff (maximum): 500nA
Voltage-Collector-emitter breakdown (maximum): 50V
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