ROHM Semiconductor BM60213FV-CE2 High-Side, Low-Side 1200 V High Voltage High and Low Side Driver; The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.

Shutdown: No Shutdown

Fall Time: 50 ns

Rise Time: 50 ns

Technology: Si

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Off Time - Max: 75 ns

Output Current: 5 A

Number of Drivers: 2 Driver

Number of Outputs: 2 Output

Supply Voltage - Max: 24 V

Supply Voltage - Min: 10 V

Propagation Delay - Max: 25 ns

Maximum Turn-On Delay Time: 75 ns

Maximum Turn-Off Delay Time: 75 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 900 mOhms