ROHM Semiconductor BCX17T116 BJTs - Bipolar Transistors PNP 45V 500MA

Width: 1.3 mm

Height: 0.95 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 30 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 425 mW

DC Current Gain hFE Max: 600 at - 500 mA, - 1 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40 at - 500 mA, - 1 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 620 mV