ROHM Semiconductor BC848BHZGT116 BJTs - Bipolar Transistors NPN SOT-23 0.1A 200 to 450hFE 30V

Technology: Si

Unit Weight: 29 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 450 at 2 mA, 5 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 600 mV