ROHM Semiconductor BC847BU3HZGT106 BJTs - Bipolar Transistors NPN General purpose transistor (AEC-Q101 Qualified). BC847BU3HZG is a transistor for audio frequency small signal amplifier. Complementary is the BC857BU3 HZG

Technology: Si

Unit Weight: 5.058 g

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 450 at 2 mA, 5 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV