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ROHM Semiconductor BC817-25T116 BJTs - Bipolar Transistors NPN PREAMP

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Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 150 MHz

Continuous Collector Current: 800 mA

DC Collector/Base Gain hfe Min: 160

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