ROHM Semiconductor 2SD2703TL BJTs - Bipolar Transistors 30V 1A NPN LOW

Width: 1.7 mm

Height: 0.77 mm

Length: 2 mm

Technology: Si

Unit Weight: 315.873 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 680 at 100 mA, 2 V

Gain Bandwidth Product fT: 320 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV