ROHM Semiconductor 2SD2675TL BJTs - Bipolar Transistors NPN 30V 1A

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 5.636 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 680 at 100 mA, 2 V

Gain Bandwidth Product fT: 320 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV