ROHM Semiconductor 2SD2537T100V BJTs - Bipolar Transistors NPN 25V 1.2A

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 130.500 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 1800

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 1.2 A

Maximum DC Collector Current: 1.2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 820

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 300 mV