ROHM Semiconductor 2SD1758TLQ BJTs - Bipolar Transistors NPN 32V 2A

Width: 5.5 mm

Height: 2.3 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 120 at 500 mA, 3 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 32 V

Collector-Emitter Saturation Voltage: 500 mV