ROHM Semiconductor 2SCR587D3TL1 BJTs - Bipolar Transistors NPN, TO-252 (DPAK), 120V 3A, Power Transistor

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 390 at 100 mA, 5 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 100 mA, 5 V

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 120 mV