ROHM Semiconductor 2SCR582D3TL1 BJTs - Bipolar Transistors NPN, TO-252 (DPAK), 30V 10A, Power Transistor

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 500 at 1 A, 3 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at 1 A, 3 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 350 mV