ROHM Semiconductor 2SCR564F3TR BJTs - Bipolar Transistors Small and Excellent Thermal Conductivity, NPN 4A 80V Middle Power Transistor

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 390 at 500mA, 3 V

Gain Bandwidth Product fT: 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 500mA, 3 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 300 mV