ROHM Semiconductor 2SCR553PT100 BJTs - Bipolar Transistors NPN 50V 2A Transistor

Technology: Si

Unit Weight: 159.425 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 450 at 50 mA, 2 V

Gain Bandwidth Product fT: 360 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at 50 mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 350 mV