ROHM Semiconductor 2SCR533PFRAT100 BJTs - Bipolar Transistors NPN SOT-89 3A 180 to 450hFE 50V

Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 450 at 50 mA, 3 V

Gain Bandwidth Product fT: 320 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at 50 mA, 3 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 350 mV