ROHM Semiconductor 2SCR522MT2L BJTs - Bipolar Transistors NPN General Purpose Amplification Transistor

Technology: Si

Unit Weight: 29.304 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at 1 mA, 2 V

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 300 mV