ROHM Semiconductor 2SCR372PT100R BJTs - Bipolar Transistors Trans GP BJT NPN 120V 0.7A
Model2SCR372PT100R
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Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 390 mA
Gain Bandwidth Product fT: 220 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 120 V
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 120 V
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