ROHM Semiconductor 2SCR372PT100Q BJTs - Bipolar Transistors Trans GP BJT NPN 120V 0.7A
Model2SCR372PT100Q
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 500 mW
DC Current Gain hFE Max: 390 mA
Gain Bandwidth Product fT: 220 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 120 V
DC Collector/Base Gain hfe Min: 120
Collector- Emitter Voltage VCEO Max: 120 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts