ROHM Semiconductor 2SCR346PT100Q BJTs - Bipolar Transistors NPN 400V Vceo 100mA Ic MPT3

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 270 at 10 mA, 10 V

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 82 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 100 mV