ROHM Semiconductor 2SC5866TLQ BJTs - Bipolar Transistors NPN 60V 2A

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 26 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV