ROHM Semiconductor 2SC5659T2LN BJTs - Bipolar Transistors NPN 25V 50MA

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 270 at 1 mA, 6 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 56 at 1 mA, 6 V

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 300 mV