ROHM Semiconductor 2SC4672T100Q BJTs - Bipolar Transistors NPN 50V 3A

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 25 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 270

Gain Bandwidth Product fT: 210 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 82

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 130 mV