ROHM Semiconductor 2SB1424T100R BJTs - Bipolar Transistors PNP 20V 3A MPT3

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 240 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 20 V