ROHM Semiconductor 2SB1198KT146R BJTs - Bipolar Transistors PNP 80V 0.5A

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 200 mV