ROHM Semiconductor 2SB1189T100Q BJTs - Bipolar Transistors PNP 80V 0.7A

Width: 2.5 mm

Height: 1.5 mm

Length: 4.5 mm

Technology: Si

Unit Weight: 130.500 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 120 at 100 mA, 3 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 700 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 200 mV