ROHM Semiconductor 2SAR583D3FRATL BJTs - Bipolar Transistors TO-252 50V 7A PWR TRANS

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 450 at - 1 mA, - 3 V

Gain Bandwidth Product fT: 230 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 7 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at - 1 mA, - 3 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 400 mV