ROHM Semiconductor 2SAR573D3TL1 BJTs - Bipolar Transistors PNP -50V -3A 10W Pwr trnstr Low VCE

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 450 at - 100 mA, - 3 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at - 100 mA, - 3 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 400 mV