ROHM Semiconductor 2SAR552PT100 BJTs - Bipolar Transistors I2C BUS 1Kbit EEPROM

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 500 at - 500 mA, - 2 V

Gain Bandwidth Product fT: 330 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at - 500 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 400 mV